Physical and Structural Properties of Sm3+ Doped Phosphate Glasses
Nursaida Harahap, Rahmaniar, Rappel Situmorang, Abd Hakim S, Juniastel Rajagukguk
Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Medan
Abstract
Abstract: Glasses treated with soil ions are very interesting because of their wide application in fields such as laser and optical fibers. Various hosts such as glass, crystal and poly crystalline are treated with soil ions. In this research the medium of glass was made with composition (70-x) P2O5 - 10Bi2O3 - 10Na2O - 10Gd2O3 - xSm2O3 with x = 0; 0.05; 0,1; 0, 5; 1.0; 3.0 (mol%) doped by active ion xSm2O3. All powdered chemical compounds with a total mass of 20 grams are mixed in alumina crucible and prepared by melt-quenching method. The optimum glass sample is cut to size (w x h x d = 1,0 x 0,2 x 1,5) mm3. Molar mass, density (ρ), Sm3+ ion concentration (N), field strength (F) have increased in value as the Sm3+ concentration increases , the dielectric constant (ε) has an increase in pada PBNaG:S1, PBNaG:S3 dan menurun pada PBNaG:S2, PBNaG:S4, PBNaG:S5, molar refractivity (Rm) increases in PBNaG:S1, PBNaG:S4 and decreases in PBNaG:S2, PBNaG:S3, PBNaG:S5, while for molar volume, polar radius and inter nuclear distance decreases with increasing concentration Sm3+ in phosphate glass. Contrast to the refractive index, the susceptibility of the oxide ion polariability (αm) and reflection loss do not change in value. Spectrum diffraction shows that the shape of pattems are found no sharp peaks along the diffraction angle observation area (2θ). It can be stated that the glass material Sm3+: Phosphate is amorphous (no sharp peaks). This shows that the concentration of Sm3+ ions does not affect the diffraction pattern of Sm: Phosphate glass medium. The highest FTIR spectrum is archieved at PBNaG: Sm5 with wave number 871 cm-1. There is a functional group P-O-P (POP) bond indicating asymmetrical strain.
Keywords: Glasses, Phosphate, Samarium, PBNaG:Sm3+
Topic: Optical, luminescence, Electronic Materials and applications