Modeling of tunneling current of a bilayer armchair graphene nanoribbon-based p-n junction diode using Airy wave-function
Amelia Fadhillah*, Intan Anjaningsih, Shofi Dhiya Ulhaq, Muhammad Fulki Fadhillah, Waslaluddin, Endi Suhendi
Department of Physics Education, Universitas Pendidikan Indonesia, Bandung, Jawa Barat, Indonesia
Abstract
Armchair Graphene Nanoribbon (AGNR) is one of the Graphene Nanoribbon (GNR)-s type which can be role as a semiconductor or conductor depends on number of atoms that arrange its width . The unique of the electrical properties of AGNR attracted researchers to make graphene as material of semiconductor based device. Because of its tiny width, graphene is very good for application on devices with tunneling electron based. In this research, the author models the behavior of tunneling current on a bilayer armchair graphene nanoribbon-based p-n junction diode using Airy function. The modeling-s result show that the tunneling current has relation with bias voltage, temperature, and characteristic of BAGNR. The tunneling current is directly proportional to the forward-bias, the width of the BAGNR, and the intrinsic electric field. It is inversely proportional to the temperature. Its value on BAGNR is bigger than on MAGNR due to the effect of interlayer coupling γ_0 and γ_1 to the energi gap. The tunneling current using the Airy function method and the WKB method have the same tendency and slight different value.
Keywords: BAGNR, p-n junction diode, tunneling current, Airy function
Topic: Physics