Surface Thermal and Electric charge of PN Diode Expose by Soft Radiation Flash Exposure
N Sangwaranatee1, I Srithanachai2, S Niemcharoen2 and S Chaiyasoonthorn3
1Applied Physics Research Group, Faculty of Science and Technology, Suan Sunandha Rajabhat University, Bangkok 10300, Thailand
2Department of Electronics, Faculty of Engineering, King Mongkut-s Institute of Technology Ladkrabang, Bangkok 10520, Thailand
3Electronics Technology, Faculty of Science, Ramkhamhaeng University, Huamark Bangkapi Bangkok Thailand. 10240
Abstract
In this study present the effect of Flash radiation to forward bias current-voltage (I-V) of PN diode by using Comsol simulation program. The results show surface thermal and electric change while expose by radiation with flash exposure technique. Series resistance (Rs) increase around 2 times and close to idea case after expose by radiation, the radiation will impact to bulk defect and reduce surface recombination. Radiation induce temperature on surface and deep into silicon bulk. The value of Rs increase with increase expose time. The changing of Rs becomes independent from radiation dose at high forward bias voltage.
Keywords: PN Diode ;Soft Radiation
Topic: Optical, luminescence, Electronic Materials and applications