Annealing Temperature Effect of ZnO Seed Layer on Integrated Photosupercapacitor Performance
Markus Diantoro1,2, Syahri Yanor1, Thathit Suprayogi1, Nandang Mufti1,2, Aripriharta3, Ahmad Taufiq1,2, Sunaryono1,2, Worawat Meevasana4
1)Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Malang, Jl. Semarang 5 Malang 65145, Indonesia
2)Centre of Advanced Material for Renewable Energy (CAMRY), Universitas Negeri Malang, Jl. Semarang 5, Malang 65145, Indonesia
3)Department of Electrical Engineering, Faculty of Engineering, Universitas Negeri Malang, Jl. Semarang 5 Malang 65145, Indonesia
4)School of Physics, Suranaree University of Technology, Thailand
Corresponding author: markus.diantoro.fmipa[at]um.ac.id
Abstract
Abstract. Photosupercapacitor is an integrated device for harvesting and storing of solar energy into electrical energy. Photosupercapacitor is constructed by solar cell (DSSC) and supercapacitor. In the solar cell part, one of the influential variables is the photoanode performance. The photoanode with ZnO layer play a role in light absorption, charge mobility, and wide band gap, which are influenced by crystal structure and nanoscale morphology. One of nanoscale morphology of ZnO is nanorods. This work is planned to investigate the effect of annealing temperature of seed layer ZnO to growth nanorods shape in photoanode of photosupercapacitor on its performance. The seed layer ZnO nanoparticle was deposited onto FTO substrate by a screen printing method. The ZnO nanorods was grown by soak FTO/ZnO in solution (Zinc nitrate, HMT, and DI water) under 100 C. The photosupercapacitor is constructed by DSSC and ZnO symmetric supercapacitor which integrated by using aluminum foil substrate. Characterization was done using XRD, SEM, UV-Vis, and I-V solar simulator for photosupercapacitor performance.
Keywords: Photosupercapacitor, annealing temperature, ZnO seed layer, nanorods
Topic: Energy Storage