The Effect of Cu Concentration on Cu2ZnSnS4 Thin Film Using Ultrasonic Spray Pyrolysis Method
Okta Nurwidyas Amalia (a), Andrew Winata (a), Nugraha (a,b), and Brian Yuliarto (a*,b)
a) Advanced Functional Materials Laboratory, Department of Engineering Physics, Faculty of Industrial Technology, Institut Teknologi Bandung, Bandung 40132, Indonesia
*brian[at]tf.itb.ac.id
b) Research Center for Nanoscience and Nanotechnology, Institut Teknologi Bandung, Bandung 40132, Indonesia
Abstract
Based on International Energy Outlook-2018, the total energy consumption of non-OECD countries is predicted to increase by almost 41% from 2010 to 2040. The use of electricity has increased more rapidly than other energy sectors, around 4.8% from 2015 to 2016. This can be solved by utilizing the potential of solar energy. Solar energy can be converted into electrical energy by solar cells. The commonly used solar cells are crystalline silicon. However, these solar cells have disadvantages in the production cost and light absorption. Therefore it is necessary to use another absorber material called Cu2ZnSnS4 (CZTS). The fabrication of Cu2ZnSnS4 material is carried out by ultrasonic spray pyrolysis because this method is simple, quick, and can be used for mass production. The effects of Cu concentration on structure, optical properties, electrical properties, and morphology are investigated by varying the moles of Cu by 1 mmol, 1.3 mmol, 1.6 mmol and 1.9 mmol. The X-ray diffraction characterization shows the material formed is Cu2ZnSnS4 with secondary phases in the form of ZnS, Cu2S, and SnS. The Cu2ZnSnS4 material formed is Cu-poor and Zn-rich with band gap of 1,7 eV-1,95 eV and semi-crystalline structure. The addition of Cu concentration doesn’t have a clear relationship with crystallinity, Cu content after sulfurization, band gap, and grain growth.
Keywords: Solar cell; Cu2ZnSnS4; Ultrasonic spray pyrolysis; Band gap
Topic: Synthesis and Characterization Techniques