Seebeck coefficient and electrical resistivity of CuEuO2 n-type semiconductor
P. Yamchumporn, K. Boonin, K. Singsoog, T. Seetawan, J. Kaewkhao
Physics Program, Faculty of Science and Technology, NakhonPathomRajabhat University, NakhonPathom, 73000, Thailand
Center of Excellence in Glass Technology and Materials Science (CEGM), Nakhon Pathom Rajabhat University, Nakhon Pathom 73000, Thailand
Thermoelectric Research Laboratory, Center of Excellence on Alternative Energy, Research and Development Institution, Sakon Nakhon Rajabhat University, 680 Nittayo Rd. Mueang District, Sakon Nakon Province, 47000, Thailand
Abstract
Abstract. In this work, Eu2O3 was replaced the Al site in CuAlO2 structures. The CuEuO2 was prepared by conventional solid-state reaction method. The Seebeck coefficient and electrical resistivity were measured by ZEM-3 series in low pressure helium gas atmosphere at temperature ranges of 315-521 K. It was found that, both electrical resistivity decrease with increasing of temperature while Seebeck coefficient and power factor show the opposite trend. The power factor was calculated by P=S2/ρ (where S is Seebeck coefficient and ρ is electrical resistivity) and exhibit highest value about 28 μW^(−1) m^(−1) K^(−2) at 521 K.
Keywords: Solid-state reaction, Seebeck coefficient, Power factor
Topic: Energy and environment materials