Influence of Reactive Ion Etching Time on Fabrication of Porous Silicon (110)
Muhammad Mufid Masud (1), Risa Suryana (1*), Osamu Nakatsuka (2)
1Department of Physics, Faculty of Mathematics and Natural Sciences, Sebelas Maret University, Jl Ir. Sutami 36A Surakarta 57126 Indonesia
*rsuryana[at]staff.uns.ac.id
2Department of Material Physics, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Abstract
Keywords: porous silicon, photolithography, reactive ion etching, resistivity, reflectance
Topic: Smart materials