Investigation the Effect of Soft X-ray Flash Exposure on PN Diode
S Chaiyasoonthorn1, I Srithanachai2, S Niemcharoen2 and N Sangwaranatee3
1Electronics Technology, Faculty of Science, Ramkhamhaeng University, Huamark Bangkapi Bangkok Thailand. 10240
2Department of Electronics, Faculty of Engineering, King Mongkut-s Institute of Technology Ladkrabang, Bangkok 10520, Thailand
3Applied Physics Research Group, Faculty of Science and Technology, Suan Sunandha Rajabhat University, Bangkok 10300, Thailand
Abstract
In this paper will present the properties of PN diode before and after expose by radiation. Although, radiation help to improve the performance of semiconductor device but still has some damage in device structure. In previous article I have showed performance improve after expose by soft radiation. The device is exposed by X-ray radiation with few second for several times. In principle of PN diode after fabrication will has defects from process such as ion implantation, doping and silicon wafer process. The results show temperature while X-ray expose on device that generate high temperature on surface and silicon boundary that may the optimize energy and expose time for treatment damage of PN diode.
Keywords: X-ray ; PN Diode
Topic: Optical, luminescence, Electronic Materials and applications