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In this paper will present the properties of PN diode before and after expose by radiation. Although, radiation help to improve the performance of semiconductor device but still has some damage in device structure. In previous article I have showed performance improve after expose by soft radiation. The device is exposed by X-ray radiation with few second for several times. In principle of PN diode after fabrication will has defects from process such as ion implantation, doping and silicon wafer process. The results show temperature while X-ray expose on device that generate high temperature on surface and silicon boundary that may the optimize energy and expose time for treatment damage of PN diode.