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The Mn1-xAgxSi1.75-yBiy (x = y = 0, 0.01, 0.02, 0.03, 0.04, and 0.05) materials were synthesized by ball milling and hot press method. The crystal structure and thermoelectric properties were analyzed it was found that the XRD patterns of all samples show mixes phase between MnSi1.75 for main phase of tetragonal structure and MnSi for secondary phase. The relative density of all samples were higher than 92%, indicating a good method for preparing high density samples. The Seebeck coefficient (S) and electrical resistivity of Ag and Bi doped Mn1-xAgxSi1.75-yBiy can be increased. The highest of S value and power factor at 673 K revealed that Mn0.98Ag0.02Si1.73Bi0.02 sample were about 119 V K-1 and 3.97 × 10-5 Wm-1K-2, respective. The highest power factor gave higher values than non-doped about 45.35 %. The Mn0.98Ag0.02Si1.73Bi0.02 sample is the most suitable for p-type of thermoelectric device fabrication.