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The results of the studies carried out on the effect of varying the precursor concentration and annealed substrate on the crystal structure, electronic and optical properties of ZnO thin film synthesized are presented in this article. An aqueous solution of Acid Nitrite was used as precursors and its concentration was varied from 0.1 M to 0.4 M. The ZnO thin film was deposited on the glass substrate by Spray Pyrolysis Deposition and annealed with different temperature from 300 oC to 600 oC. The crystal structure, electronic and optical properties were investigated by x-ray diffraction and UV-Spectrometer. Whereas, the surface morphology and the grain size of the thin films were investigated by SEM. Particles with sizes ranging between 21.83 to 43.67 nm were synthesized by varying the precursor concentrations and varying annealed substrate temperature. It showed that concentration of the precursor had slightly impact to the particle size. However, the increase in particle size with increasing annealed temperature is found to be gradual. Particle sizes calculated from the X Ray diffraction studies of the samples using Scherrer formula were found to agree fairly well with those estimated from band gap values. The average transparent of all thin film was more than 75%. The band gap of the ZnO thin films were estimated by Tauc Plot Relation. It showed that the band gap values were increased with the increasing of precursor concentration due to Burstein-Moss Effect. In addition, the decrease in band gap values was found with increasing annealed temperature. Our results demonstrated that the varying precursor concentration and annealed substrate temperature can enhance the structure, electronic and the optical properties of ZnO thin films.