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Influence of Reactive Ion Etching Time on Fabrication of Porous Silicon (110)
Muhammad Mufid Masud (1), Risa Suryana (1*), Osamu Nakatsuka (2)
UNS
Abstract
Porous silicon has been fabricated by photolithography and Reactive Ion Etching with various etching times in the previous study. The PSi surfaces have the pore size in the range of for PSi and 17.4 to 37.7 nm for PSi 100. Meanwhile, the PSi has the resistivity around 1.14 to 2.60 10 min4 &
Keywords: porous silicon, photolithography, reactive ion etching, resistivity, reflectance.
Topic: Smart materials
Link: https://ifory.id/abstract/LyNY6zW42G3v
Conference: International Conference on Renewable Energy (ICORE 2019)
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