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Metal oxide semiconductor field effect transistors (MOSFETs) has an important role in electric circuits with its nanoscale sizes. But with its small size, MOSFETs have performance limitation to work in ultra-low data, leaky currents, short channel effects, and increased speed. This performance limitation makes the tunneling field effect transistor (TFET) an alternative to replace the MOSFET. In this study, a drain current on devices based on bilayer armchair graphene nanoribbon (BAGNR) was modeled using the Airy function approach. Schrödinger equation solved with the Airy function approach produces a transmittance value, from this transmittance the drain current value can be determined from the Landauer formula with the help of the Gauss Legendre Quadrature (GLQ) method. The results of the modeling show that the drain current value increases with increasing gate voltage (Vg), drain voltage (Vd) and width of BAGNR while the increase in oxide thickness and temperature makes the drain current decrease.