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We have grown no-doped and Al-doped ZnO thin films with different Al element composition by ultrasonic spray pyrolysis (USP). The deposition by USP was performed with the temperature of 450 oC, ultrasonic frequency of 1.7 MHz, and under atmosphere ambient for 15 minutes on top of Si substrate. No-doped and Al-doped ZnO thin films were confirmed structurally by x-ray diffraction (XRD). Optical measurement also performed in order to observe absorbance, transmittance, and reflectance properties. Photoluminescence properties show two typical ZnO emissions i.e. ultraviolet and visible. Then, the relevance of structural properties and optical properties will be used to analyze the effect of Al element as dopant on characteristic of electrochemical impedance of ZnO thin films.