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Porous silicon (PSi) is formed on n-type silicon wafers Si (100) and Si (111) substrates using electrochemical anodization method. Silicon wafers were anodized in HF (40%) dan ethanol (99%) solution with a ratio of 1:1 at a current density of 10 mA/cm2, 20 mA/cm2, 30 mA/cm2, 40 mA/cm2, dan 50 mA/cm2 for 30 minutes. The reflectances of PSi were characterized by UV-Vis spectroscopy and the depth and pore size of PSi were characterized by AFM. The reflectance of PSi on both Si(100) and Si(111) substrates decreased with increasing the current density while AFM images confirmed that the depth and the pore size increased with increasing the current density. It is concluded that PSi could be applied as an anti-reflective surface in solar cell devices. The reflectance of PSi on Si(100) substrate had a value smaller than it is on Si (111) substrate. This indicated that the crystal orientation of (100) can be etched easier than the crystal orientation of (111).