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Metal Oxide Semiconductor (MOS) material is chosen as a gas sensor because of its nature which can be modified as needed. In this research SnO2 is choosen becoause of its chemical and physical stability compared to the other MOS. However for gas sensor application, SnO2 have drawbacks of low selectivity and high operating temperature. To overcome those drawbacks, the SnO2 is mixed with graphene by molar ratio 1:1, and synthesized with polyol method using ethylene glycol as solvent, at 197 oC for 12 hours. The resulting material is then settled, and calcined at 550 oC. The characterization used are SEM, TEM, EDS, UV-Vis spectrophotometers, and gas sensor performance test with CO gas. The particle size are in range of 5-15 nm. The band gap test result of SnO2-graphene is 2,94 eV which decrease 0,62 from SnO2 band gap. The detection of 20 ppm CO gas for 10 minutes result in highest sensivity of 59% at 300 oC.