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Porous silicon (PSi) has been fabricated using electrochemical anodization method on n-type Si (111) substrate with methanol as an anodizing solution. The ratio of the anodization solution was 1 : 1 for HF and methanol. Platinum was as a cathode while silicon was as an anode. Duration of Anodization time was maintained constant that is 30 min with a variation of current density i.e. 10 mA, 20 mA, 30 mA, 40 mA, and 50 mA. Then the samples were cleaned by boiled H2SO4 and H2O2 with ratio 3:1 and overflow for 5 min. The optical reflectance of the sample was determined using UV-Vis Spectrophotometer and surface morphology was observed using AFM. The reflectance decreased with increasing the current density. AFM images confirmed that pores size and depth increased with increasing the current density. Due to PSi affect reflectance value, it is concluded that PSi can be applied as an anti-reflective material in solar cell devices.