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Bismuth ferrite oxide (BiFeO3) thin film has been grown on a quartz substrate using the Chemical Solution Deposition (CSD) method. The deposition of BiFeO3 thin film used holding time variations (30, 45 and 60 minutes) and annealing temperature (550oC and 600oC). The results of X-Ray Diffraction (XRD) characterization showed that the increase of holding time caused intensity to be higher. This indicates that increasing intensity will increase the crystallinity and crystallite size. High annealing temperature caused crystallinity and crystallite size of the BiFeO3 thin film to increase. Characterization of Scanning Electron Microscopy (SEM) showed that increasing holding time would decrease the grain size with the boundary between grains look clearer, homogeneous, and low porosity. Increasing annealing temperature caused an increase of the grain size in which it is difficult to determine the grain boundaries and high porosity. The characterization of UV-VIS showed the absorbance and transmittance of the BiFeO3 thin film. The highest absorbance was obtained at 600oC/45 minutes, about 2.75. In addition, low energy gap was obtained from the variation of holding time and annealing temperature about 2.5-2.8 eV.